Defect-position identifying method for semiconductor substrate

A defect-position identifying method for a semiconductor substrate comprising the steps of:

• forming at least three reference points on a semiconductor substrate;
• detecting said reference points and defects of said semiconductor substrate by means of a first evaluating system, which is provided for evaluating said defects of said semiconductor substrate, to measure coordinate values of said reference points and defects in a system of coordinates of said first evaluating system;
• selecting an internal defect existing in said semiconductor substrate from the detected defects;
• measuring coordinate values of each of said reference points by means of a marking system capable of applying a mark on said semiconductor substrate;
• determining an affine transformation for transforming said system of coordinates of said first evaluating system to said system of coordinates of said marking system, on the basis of said coordinate values of each of said reference points in said first evaluating system and said marking system;
• estimating the position of the selected defect on said marking system on the basis of the determined affine transformation and the selected defect, to form a mark near the estimated position by said marking system;
• and
• evaluating the selected defect using the formed mark by means of a second evaluating system for evaluating said defects on said semiconductor substrate.

A defect-position identifying method for a semiconductor substrate comprising the steps of:

• detecting a plurality of defects of said semiconductor substrate by means of a first evaluating system, which is provided for evaluating said defects of said semiconductor substrate, to measure coordinate values of said defects;
• detecting at least three defects, which are not arranged on the same straight line on said semiconductor substrate, by means of a second evaluating system, which is provided for evaluating said defects of said semiconductor substrate, to measure coordinate values of said at least three defects;
• extracting a set of three defects forming a triangle having a shape closest to all of triangles, each of which has vertexes arranged at said defects detected by means of said second evaluating system, from said plurality of defects detected by means of said first evaluating system;
• and
• determining an affine transformation on the basis of coordinate values of said set of defects in said first evaluating defect and coordinate values of a set of defects detected by said second evaluating system.