TFT-LCD having pixel electrode overlapping scan and data lines except at the intersection of lines
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHongyong Zhang, Takeshi Fukunaga
Life of this patent
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Abstract
A structure is provided which avoids overlap of a pixel electrode and an intersecting portion of a gate line and a data line. For example, the pixel electrode is patterned such that its corner portion is intentionally cut out to avoid the intersecting portion. With this structure, the capacitance of a storage capacitor that is formed by an overlapping portion of the pixel electrode and a black matrix can be increased while short-circuiting in a third interlayer insulating film that is interposed between the pixel electrode and the black matrix is prevented.
Claims6
An electro-optical device comprising:
- an active matrix substrate comprising:
- a gate line formed on a substrate having an insulating surface;
- a first interlayer insulating film covering the gate line;
- a data line formed on the first interlayer insulating film so as to cross the gate line;
- a thin-film transistor formed in the vicinity of an intersecting portion of the gate line and the data line;
- a second interlayer insulating film;
- a pixel electrode being a transparent conductive film and formed over the gate line and the data line with the second interlayer insulating film interposed in between, the pixel electrode coextending with the gate line and the data line in areas other than an intersecting portion of the gate line and the data line with the interlayer insulating films interposed in between;
- a third interlayer insulating film covering the pixel electrode;
- a black matrix made of a conductive material and formed on the third interlayer insulating film;
- an opposed substrate having electrodes on a surface thereof;
- and
- spacers and a liquid crystal interposed between the active matrix substrate and the opposed substrate.
A manufacturing method of an electro-optical device, comprising the steps of:
- forming gate lines made of a conductive material on a substrate having an insulating surface;
- forming a first interlayer insulating film so as to cover the gate lines;
- forming data lines on the first interlayer insulating film so that they cross the gate lines;
- forming a second interlayer insulating film so as to cover the gate lines and the data lines;
- forming transparent conductive films as pixel electrodes on the second interlayer insulating film so that the pixel electrodes coextend with the gate lines and the data lines in areas other than intersecting portions of the gate lines and the data lines with the interlayer insulating films interposed in between;
- forming a third interlayer insulating film so as to cover the pixel electrodes;
- forming a black matrix made of a conductive material on the third interlayer insulating film;
- inserting spacers and sealing a liquid crystal between the substrate and an opposed substrate having electrodes on a surface thereof;
- and
- forming thin-film transistors in the vicinity of the respective intersecting portions of the gate lines and the data lines that are arranged in matrix form.
Dependencies are inferred from the claim text.