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US 6,320,476 B1Granted
Millimeter-band semiconductor switching circuit
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYoshihiro Tsukahara
Life of this patent
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Abstract
A semiconductor switch includes parallel connected FETs, each FET having gate electrodes interleaved with first and second electrodes on a semiconductor substrate. An electrode interconnect connects, in a lengthwise direction of the first electrodes, mutually adjacent first electrodes. A further electrode interconnect connects second electrodes of the FETs in a direction intersecting the first electrode interconnect. A ground line connects to ground at least two of the second electrodes at the outside-most positions of the second electrodes.
Claims17
A millimeter-band semiconductor switching circuit having:
- a field effect transistor (FET) as a switching element;
- a millimeter-band transmission line lying along a connection direction and having two parts;
- and
- a ground having two ground connections, the FET being disposed between the two parts of the millimeter-band transmission line and the two ground connections and comprising:
- a generally comb-shaped gate electrode having a plurality of gate electrode prongs and connected to a current supply path;
- a plurality of first electrodes and second electrodes arrayed in alternating sequence with the plurality of gate electrode prongs, a gate electrode prong being disposed between each pair of first and second electrodes, and, each first electrode being disposed between a respective pair of the gate electrode prongs, at an interval;
- a first electrode interconnect interconnecting the plurality of first electrodes at each of two opposite lengthwise ends of the first electrodes to the two ground connections at opposite sides of the FET transverse to the connection direction;
- and
- a second electrode interconnect including an air bridge interconnecting the plurality of second electrodes, wherein the two parts of the millimeter-band transmission line are respectively connected to the second electrode interconnect at opposite sides of the FET in the connection direction.
6 more elements
A millimeter-band semiconductor switching circuit having:
- a field effect transistor (FET) as a switching element;
- a ground;
- and
- a millimeter-band transmission line having two parts, the FET being disposed between the two parts of the millimeter-band transmission line and comprising:
- a generally comb-shaped gate electrode having a plurality of gate electrode prongs and connected to a current supply path;
- a plurality of first electrodes and second electrodes arrayed in alternating sequence with a plurality of gate electrode prongs, a gate electrode prong being disposed between each pair of first and second electrodes, and each second electrode being disposed between a respective pair of the gate electrode prongs with a gap from the gate electrode prongs;
- ground connections directly connecting to the ground each of the plurality of first electrodes;
- and
- an electrode interconnect interconnecting the plurality of second electrodes, and respectively connected at opposite sides of the FET to the two parts of the transmission line.
6 more elements
A millimeter-band semiconductor switching circuit having:
- a field effect transistor (FET) as a switching element;
- a millimeter-band transmission line lying along a connection direction and having two parts;
- and
- a ground having two ground connections, the FET being disposed between the two parts of the millimeter-band transmission line and the two ground connections and comprising:
- a generally comb-shaped gate electrode having a plurality of gate electrode prongs and connected to a current supply path;
- a plurality of first electrodes and second electrodes arrayed in alternating sequence with the plurality of gate electrode prongs, a gate electrode prong being disposed between each pair of first and second electrodes, and each first electrode being disposed between a respective pair of the gate electrode prongs at an interval;
- a first electrode interconnect interconnecting the plurality of first electrodes at each of two opposite lengthwise ends of the first electrodes;
- and
- a second electrode interconnect including an air bridge interconnecting the plurality of second electrodes, wherein the second electrode interconnect connects the second electrodes to the two ground connections at opposite sides of the FET transverse to the connection direction, and the two parts of the millimeter-band transmission line are respectively connected to the first electrode interconnect at opposite sides of the FET in the connection direction.
6 more elements
Dependencies are inferred from the claim text.