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US 6,320,456 B1Granted
Charge pump
AssigneeTexas Instruments Deutschland GmbH
InventorErich Bayer
Life of this patent
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AssigneeTexas Instruments Deutschland GmbH
InventorErich Bayer
Estimating the term…
A charge pump (10) includes a supply voltage terminal (16) and a ground terminal (18) for generating at an output terminal an output voltage (34) which is higher than the voltage present at the supply voltage terminal. It has two complementary MOS field-effect transistors (12, 14), the source-drain paths of which are connected in series between the supply voltage terminal and the ground terminal. It further has a driving circuit (26) for driving the two MOS field-effect transistors and a charge storage capacitor connected by one terminal to the point connecting the source-drain paths of the two MOS field-effect transistors. This charge storage capacitor is formed by the gate capacitance of a further MOS field-effect transistor (20), the source-drain path of which is connected at one end via a first diode (22) to the supply voltage terminal and at the other end via a second diode (24) to the output terminal. The gate of this field-effect transistor is connected to the point connecting the series arrangement of the source-drain paths of the two complementary MOS field-effect transistors.
A charge pump comprising a supply voltage terminal and a ground terminal for generating at an output terminal an output voltage which is different from the voltage present at the supply voltage terminal, with two complementary MOS field-effect transistors, the source-drain paths of which are connected in series between said supply voltage terminal and said ground terminal, a driving circuit for driving said two MOS field-effect transistors and a charge storage capacitor connected by one terminal to the point connecting said source-drain paths of said two MOS field-effect transistors, wherein said charge storage capacitor is formed by the gate capacitance of a further MOS field-effect transistor (20), the source-drain path of which is connected at one end via a first diode (22) to said supply voltage terminal (16) and at the other end via a second diode (24) to said output terminal (34), and the gate of which is connected to the point connecting the series of the source-drain paths of said two complementary MOS field-effect transistors (12, 14).
Dependencies are inferred from the claim text.