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AssigneeKabushiki Kaisha Toshiba
InventorsShigeru Atsumi, Masao Kuriyama, Akira Umezawa, Hironori Banba, Tadayuki Taura, Hidetoshi Saito
Estimating the term…
A semiconductor integrated circuit device has a data storage section for storing mode setting data corresponding to products of a plurality of types, redundancy data, and so on. The redundancy storage section is made up of a nonvolatile transistor for storing the mode setting data corresponding to the products, the redundancy data, etc., a latch circuit for latching data read out from the nonvolatile transistor and generating a mode signal, and a transmission gate for transmitting the data from read out from the nonvolatile transistor to the latch circuit. The semiconductor integrated circuit device also has an internal voltage generator for generating an internal voltage. This internal voltage is used as the power supply voltage of the data storage section.
A detecting circuit formed on a semiconductor substrate with a fixed potential point and a variable potential point having a potential difference from the fixed potential point that changes upon power-on, to detect that the potential difference between the fixed potential point and the variable potential point reaches a predetermined potential difference, comprising:
A detecting circuit for detecting a power-on potential level, said detecting circuit being formed on a semiconductor substrate with a fixed potential point and a variable potential point having a potential difference from the fixed potential point that changes upon power-on, to detect that the potential difference between the fixed potential point and the variable potential point reaches the power-on potential level, comprising:
Dependencies are inferred from the claim text.