Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material
AssigneeAdvanced Micro Devices, Inc.
InventorsSunil N. Shabde, Yowjuang William Liu, Ting Yiu Tsui
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Abstract
A method (100) of determining a doping type and a doping concentration of a semiconductor material (101) includes the steps of moving carriers (103) in the material, wherein a number of carriers is a function of the doping concentration of the material (101) and a type of carriers is a function of the doping type of the material (101). The carriers are deflected (130) toward a surface (110) of the material (101) and an accumulated charge profile on the surface of the material, due to the deflected carriers, is detected (140) and used to calculate (180) the doping concentration across a surface (110) of the material (101).
Claims15
A method of determining a doping type and a doping concentration of a processed semiconductor material, comprising the steps of:
- moving carriers in the material, wherein a number of carriers is a function of the doping concentration of the material and a type of carriers is a function of the doping type of the material;
- deflecting the carriers toward a surface of the material;
- and
- detecting an accumulated charge on the surface of the material due to the deflected carriers.
Dependencies are inferred from the claim text.