Thin-film electron source and display produced by using the same
AssigneeHitachi, Ltd.
InventorsToshiaki Kusunoki, Mutsumi Suzuki
Life of this patent
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AssigneeHitachi, Ltd.
InventorsToshiaki Kusunoki, Mutsumi Suzuki
Estimating the term…
This relates to a thin-film type electron source having a structure of a lower electrode 11, an insulating layer 12 and an upper electrode 13 being laminated in such order, for emitting electron from a surface of the upper electrode 13 into a vacuum, upon application of voltage between the lower electrode 11 and the upper electrode 13, in a polarity thereof so that the upper electrode 13 is positive in the voltage. In the above, as the insulating layer 12, being made from anodized film of Al-alloy lower electrode 11, is used one which has a ratio of a reverse direction diode current when applying an electric field of 10 MV/cm thereacross in a reverse direction, with respect to a forward direction diode current when applying an electric field of 10 MV/cm thereacross in a forward direction so as to cause emission of electron therefrom, being equal to or greater than 0.12, when it is converted into a case where height of barrier of the insulating layer 12 to the lower electrode 11 is equal to that of the upper electrode 13. Due to the above, improvement in symmetry is proceeded on the asymmetry of the current-voltage characteristic curve of the insulating layer 12, thereby elongating the life time of the thin-film type electron source.
A thin-film type electron source having a laminated structure of a lower electrode, an insulating layer and an upper electrode, for emitting electron from a surface of said upper electrode into a vacuum, upon application of voltage between said lower electrode and said upper electrode, in a polarity thereof so that said upper electrode is positive in the voltage, being characterized in that said lower electrode is made from Al-alloy adding metal into Al which can be anodized, while said insulating layer is made from anodized film which is anodized upon surface of said lower electrode, wherein a ratio of a reverse direction diode current when applying an electric field of 10 MV/cm thereacross in a reverse direction, with respect to a forward direction diode current when applying an electric field of 10 MV/cm thereacross in a forward direction so as to cause emission of electron therefrom, is equal to or greater than 0.12, when it is converted into a case where height of barrier of said insulating layer to said lower electrode is equal to that of said upper electrode.
A thin-film type electron source as defined in the claim wherein the metal which can be anodized, being added into said ower electrode, is at least one kind selected from a group ncluding Nd, Zr, Ta, Ti, Nb and Hf.
A thin-film type electron source as defined in the claim wherein said upper electrode is made of at least one kind elected from a group including Ir, Pt, Au, Ru, Rh, Al, Al-alloy, Ti, Cr, and conductive ITO, ZnO, Sno2, IrO2 and PdO.
A display device comprising:
Dependencies are inferred from the claim text.