Interconnect wiring with sidewalls and inter-wiring insulation composed of fluorine
AssigneeNEC Corporation
InventorNoriaki Oda
Life of this patent
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Abstract
A semiconductor device comprises a wiring in each of one or more wiring layers formed on a semiconductor substrate, and wiring sidewall layers which are formed on side edge portions of the wiring and which include fluorine-containing silicon oxide. It is possible to form an inter-wiring insulating film comprising fluorine-containing silicon oxide or Hydroxy Silsesquioxane on the outer surface of the wiring sidewall layers. Further, it is possible to form thermally diffused regions of fluorine into which fluorine is thermally diffused from the wiring sidewall layers in the inter-wiring insulating layer and near the interfaces with the wiring sidewall layers.
Claims19
A semiconductor device comprising:
- a wiring in each of one or more wiring layers formed on a semiconductor substrate;
- and
- wiring sidewall layers which are formed on side edge portions of said wiring and which include fluorine-containing silicon oxide,
- an inter-wiring insulating film comprising fluorine-containing silicon oxide is formed on the outer surface of said wiring sidewall layers, the fluorine concentration in said fluorine-containing silicon oxide forming said inter-wiring insulating film is smaller than fluorine concentration of said fluorine-containing silicon oxide forming said wiring sidewall layers, and wherein thermally diffused regions of fluorine into which fluorine is thermally diffused from said wiring sidewall layers are formed in said inter-wiring insulating layer and near the interfaces with said wiring sidewall layers.
A semiconductor device comprising:
- a wiring in each of one or more wiring layers formed on a semiconductor substrate;
- and
- wiring sidewall layers which are formed on side edge portions of said wiring and which include fluorine-containing silicon oxide,
- wherein an inter-wiring insulating film comprising Hydroxy Silsesquioxane is formed on the outer surfaces of said wiring sidewall layers, and
- wherein thermally diffused regions of fluorine into which fluorine is thermally diffused from said wiring sidewall layers and in which said Hydroxy Silsesquioxane is dehydrogenated and density of said Hydroxy Silsesquioxane is lowered are formed in said inter-wiring insulating layer and near the interfaces with said wiring sidewall layers.
Dependencies are inferred from the claim text.