Semiconductor metalization barrier and manufacturing method therefor

A semiconductor device comprising:

• a semiconductor substrate;
• a first dielectric layer on said semiconductor substrate, said first dielectric layer having an opening provided therein;
• a first conductive layer disposed in said opening in said first dielectric layer;
• a second dielectric layer disposed on said first dielectric layer and said first conductive layer, said second dielectric layer having a second opening provided therein exposing a portion of said first conductive layer;
• a Period 5 transition metal disposed in said second opening whereby said first conductive layer is activated by the Period 5 transition metal;
• and
• a plurality of Period 4 transition metals in alloy selectively disposed on said Period 5 transition metal to form a barrier layer thereon an exterior electrical connection the Period 4 transition metals, wherein the external electrical connection uses a material selected from a group consisting of copper, aluminum, gold, silver, an alloy thereof, and a combination thereof.