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US 6,320,262 B1Granted
Semiconductor device and manufacturing method thereof
AssigneeRicoh Company, Ltd.
InventorAkishige Murakami
Life of this patent
Estimating the term…
Abstract
The present invention aims at improving the lifetime of the wiring connecting to the hole nearest to the bonding pad and thereby improving the reliability of the semiconductor device. The invention relates to such semiconductor device and method of manufacturing the semiconductor device. The semiconductor device includes a plurality of first metal layers connected to a bonding pad, and plurality of aluminum wirings respectively connected to the first metal layers. The plurality of aluminum wirings are connected to a single second metal layer and have a length equal to or short than Blech Length.
Claims28
A semiconductor device comprising:
- a bonding pad;
- a first metal layer including a plurality of separate sections each individually connected to said bonding pad;
- a second metal layer including a single section connected to a circuit block;
- and
- plural aluminum wirings respectively connected between said plurality of separate sections of said first metal layer and said single section of said second metal layer, the first metal layer, the second metal layer and the plural aluminum wirings being provided on a same plane,
- wherein said plural aluminum wirings have a length equal to or shorter than Blech Length.
3 more elements
A semiconductor device comprising:
- a bonding pad;
- a first metal layer including a plurality of separate sections each individually connected to said bonding pad;
- a second metal layer including a single section connected to a circuit block;
- and
- plural aluminum wirings respectively connected between said plurality of separate sections of said first metal layer and said single section of said second metal layer,
- wherein said first metal layer and said second metal layer are formed in respective layers of a multiple-layered type device and wherein said plural aluminum wirings have a length equal to or shorter than Blech Length.
3 more elements
A semiconductor device comprising:
- bonding pad means;
- a first metal layer means including a plurality of separate sections each individually connected to said bonding pad means;
- a second metal layer means including a single section connected to circuit block means;
- and
- plural aluminum wiring means respectively connected between said plurality of separate sections of said first metal layer means and said single section of said second metal layer means, the first metal layer means, the second metal layer means and the plural aluminum wiring means, being provided on a same plane,
- wherein said plural aluminum wiring means have a length equal to or shorter than Blech Length.
3 more elements
A semiconductor device comprising:
- bonding pad means;
- a first metal layer means including a plurality of separate sections each individually connected to said bonding pad means;
- a second metal layer means including a single section connected to circuit block means;
- and
- plural aluminum wiring means respectively connected between said plurality of separate sections of said first metal layer means and said single section of said second metal layer means,
- wherein said first metal layer means and said second metal layer means are formed in respective layers of a multiple-layered type device and wherein said plural aluminum wiring means have a length equal to or shorter than Blech Length.
3 more elements
A semiconductor device comprising:
- a first metal layer including a plurality of separate sections each individually connected to a bonding pad;
- and
- a plurality of aluminum wirings respectively connected to said separate sections of said first metal layer,
- wherein said plurality of aluminum wirings have a length equal to or shorter than Blech Length and are connected to a single section of a second metal layer, and wherein the second metal layer is connected to a circuit block, the first metal layer, the second metal layer and the plural aluminum wirings being provided on a same plane.
1 more element
A semiconductor device comprising:
- a first metal layer including a plurality of separate sections each individually connected to a bonding pad;
- and
- a plurality of aluminum wirings respectively connected to said separate sections of said first metal layer,
- wherein said plurality of aluminum wirings have a length equal to or shorter than Blech Length and are connected to a section of a single second metal layer, and wherein the second metal layer is connected to a circuit block,
- wherein said first metal layer and said second metal layer are formed in respective layers of a multiple-layered type device.
2 more elements
A semiconductor device comprising:
- a first metal layer means including a plurality of separate sections each individually connected to bonding pad means;
- and
- a plurality of aluminum wiring means respectively connected to said separate sections of said first metal layer means,
- wherein said plural aluminum wiring means have a length equal to or shorter than Blech Length and are connected to a single section of a second metal layer means, and wherein the second metal layer means is connected to circuit block means, the first metal layer means, the second metal layer means and the plural aluminum wirings being provided on a same plane.
1 more element
A semiconductor device comprising:
- a first metal layer means including a plurality of separate sections each individually connected to bonding pad means;
- and
- a plurality of aluminum wiring means respectively connected to said separate sections of said first metal layer means,
- wherein said plural aluminum wiring means have a length equal to or shorter than Blech Length and are connected to a single section of a second metal layer means, and wherein the second metal layer means is connected to circuit block means,
- wherein said first metal layer means and said second metal layer means are formed in respective layers of a multiple-layered type device.
2 more elements
Dependencies are inferred from the claim text.