US 6,320,226 B1Granted

LCD with increased pixel opening sizes

AssigneeLG. Philips LCD Co., Ltd.

InventorsTieer Gu, Willem den Boer

Life of this patent

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Abstract

A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant ε (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 μm) of the insulating layer reduce the pixel electrode-address line parasitic capacitance CPL in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

Claims2

Dependent claims

A liquid crystal display comprising:

first and second substrates;
a plurality of transistors supported by at least said first substrate;
address lines supported by at least said first substrate;
an insulating layer having a thickness in an area thereof of at least about 1.5 μm, said insulating layer being supported by at least said first substrate;
a plurality of pixel electrodes supported by at least said first substrate, each of said pixel electrodes being in communication with a corresponding one of said transistors;
said insulating layer being provided in at least an area of overlap between at least a portion of one of said pixel electrodes and at least a portion of one of said transistors so that said one pixel electrode is in communication with an electrode of said one transistor through a contact hole defined in said insulating layer;
and
said insulating layer being dimensioned and positioned so that a capacitance between said one pixel electrode and an address line which said one pixel electrode at least partially overlaps is less than about 0.01 pF.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/398,474Filed 17 Sep 1999 · continuation
Priority: 6 Jun 1995
Granted: 20 Nov 2001
Term ends: Not estimatedThe source records don’t support an estimate.

Classification19 codes

H10F 39/802
Constructional details of image sensors: geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
G02F 1/136213
Active matrix addressed cells: storage capacitors associated with the pixel electrode
G02F 1/136227
Active matrix addressed cells: through-hole connection of the pixel electrode to the active element through an insulation layer
G02F 1/136286
Active matrix addressed cells: wiring, e.g. gate line, drain line

Family

Application08/470,271Parent of this continuation · filed 6 Jun 1995
Application08/956,944Parent of this continuation · filed 23 Oct 1997
Application09/210,577Parent of this continuation · filed 14 Dec 1998
US 5,955,744 AParent of this continuation
US 6,320,226 B1This patent

From the US filing history. Foreign family members aren’t listed.