SOI CMOS body contact through gate, self-aligned to source- drain diffusions
AssigneeInternational Business Machines Corporation
InventorsMichael J. Hargrove, Jack A. Mandelman
Life of this patent
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Abstract
A structure and process for making a semiconductor device with SOI body contacts under the gate conductor. The gate conductor is partitioned into segments and provides a body contact under each gate conductor segment over the width of the device. A plurality of body contacts may be distributed across the length of the gate conductor. This results in a relatively short path for holes leaving the body to traverse and allows accumulated charge to be removed from the body region under the gate. The structure provides for stable and efficient body-contact operation for SOI MOSFETS of any width operating at high speeds.
Claims9
A body contact structure under a gate conductor on a silicon on insulator substrate comprising:
- (a) a first insulating layer overlying said gate conductor and said silicon on insulator substrate;
- (b) an opening in said substrate extending from a top surface of said first insulating layer through said gate conductor to a semiconductor substrate, said opening having a pair of sidewalls and a bottom;
- (c) an insulating spacer, one on each of said sidewalls of said opening adjacent said first insulating layer and said gate conductor;
- (d) a layer of a first conductive material in said opening;
- (e) a layer of a second insulating material over said first conductive material layer.
Dependencies are inferred from the claim text.