II-VI compound semiconductor device
AssigneeNEC Corporation
InventorKoichi Naniwae
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Abstract
A layer structure for a II-VI compound semiconductor device is formed on a GaAs substrate of III-V compound, wherein lattice mismatching is prevented by a first layer interposed between the GaAs substrate and a II-VI compound semiconductor active layer and made of III-V compound semiconductor including In element as a constituent element thereof. The thickness of the first layer is less than the critical thickness allowing coherent growth. Alternatively, the III-V compound of the first layer has a lattice constant substantially equal to the lattice constant of the GaAs substrate. The first layer may be a superlattice layer.
Claims14
A II-VI compound semiconductor device comprising a GaAs substrate, at least one first layer made of Ill-V compound semiconductor material formed on said GaAs substrate, said at least one first layer including an In-containing layer selected from the group consisting of InGaAs and InAs, said at least one first layer forming a superlattice layer, said at least one first layer as a whole having a thickness lower than a critical thickness allowing coherent growth and a second layer made of II-VI compound semiconductor formed on said at least one first layer.
A II-VI compound semiconductor device comprising a GaAs substrate, a first layer made of III-V compound semiconductor formed on said GaAs substrate, a second layer made of a III-V compound semiconductor material formed on said first layer, said second layer containing In as a constituent element thereof, said first layer having a lattice constant that is closer to that of said GaAs substrate than the second layer, and a third layer made of II-VI compound semiconductor formed on said second layer, wherein said GaAs substrate comprises a GaAs substrate body and a GaAs buffer layer.
A II-VI compound semiconductor device comprising a GaAs substrate, at least one first layer made of III-V compound semiconductor material formed on said GaAs substrate, said at least one first layer including an In-containing layer selected from the group consisting of InGaAs and InAs, said at least one first layer forming a superlattice layer, said at least one first layer having a composition allowing substantial lattice matching between said GaAs substrate and said at least one first layer, and a second layer made of II-VI compound semiconductor formed on said at least one first layer.
Dependencies are inferred from the claim text.