Back to results
US 6,320,207 B1Granted
Light emitting device having flat growth GaN layer
AssigneeKabushiki Kaisha Toshiba
InventorsChisato Furukawa, Masayuki Ishikawa, Hideto Sugawara, Kenji Isomoto
Life of this patent
Estimating the term…
Abstract
A light emitting device has an N-type gallium nitride system compound semiconductor layer provided on a substrate; and a P-type gallium nitride system compound semiconductor layer provided on said N-type gallium nitride system compound semiconductor layer. The N-type gallium nitride compound semiconductor layer has such an area that an impurity concentration increases corresponding to a layer thickness from the side of said substrate.
Claims15
A light emitting device comprising:
- a substrate;
- a first N-type gallium nitride system compound semiconductor layer provided on said substrate so as to increase an impurity concentration from a first impurity concentration of an N-type impurity to a second impurity concentration of the N-type impurity;
- a second N-type gallium nitride system compound semiconductor layer having the second impurity concentration of the N-type impurity and provided on said first N-type gallium nitride system compound semiconductor layer;
- and
- a P-type gallium nitride system semiconductor layer provided on said second N-type gallium nitride system compound semiconductor layer.
2 more elements
A light emitting device comprising:
- a substrate;
- a first N-type gallium nitride system compound semiconductor layer provided on the surface of said substrate and having a first impurity concentration;
- a second N-type gallium nitride system compound semiconductor layer provided on the surface of said first N-type gallium nitride system compound semiconductor layer;
- with its impurity concentration changing from said first impurity concentration to a second impurity concentration corresponding to a layer thickness;
- a third N-type gallium nitride system compound semiconductor layer provided on the surface of said second N-type gallium nitride system compound semiconductor layer and having said second impurity concentration;
- and
- a P-type gallium nitride system compound semiconductor layer provided on said third N-type gallium nitride system compound semiconductor layer.
4 more elements
A light emitting device comprising:
- a substrate;
- a first P-type gallium nitride system compound semiconductor layer provided on said substrate so as to increase an impurity concentration from a first impurity concentration of a P-type impurity to a second impurity concentration of the P-type impurity;
- and
- a second P-type gallium nitride system compound semiconductor layer having the second P-type impurity concentration and provided on said first P-type gallium nitride system compound semiconductor layer.
1 more element
Dependencies are inferred from the claim text.