Semicondonductor device and a process for the production thereof

A semiconductor device having a semiconductor element, wherein said semiconductor device comprises a stacked body formed by the process comprising:

• (a) providing a laminate comprising said semiconductor element and a sealing resin which are interposed between a front surface member and a back face member;
• (b) subjecting said laminate to a vacuum-treatment at a reduced pressure of 5 Torr or less and maintaining the laminate at said reduced pressure for 5 to 40 minutes;
• (c) subjecting the vacuum-treated laminate to thermocompression bonding at a reduced pressure of 5 Torr or less;
• and
• (d) cooling the thermocompressed laminate to contact bond the laminate,
• wherein the sealing resin is positioned between the semiconductor element and the surface member, the sealing resin comprises ethylene-vinyl acetate copolymer, and the ethylene-vinyl acetate copolymer is crosslinked by an organic peroxide.

A process for producing a semiconductor device having a semiconductor element, said process comprising the steps of:

• (a) providing a laminate comprising said semiconductor element and a sealing resin which are interposed between a front surface member and a back face member;
• (b) superposing a flexible sheet on said laminate and subjecting said laminate to a vacuum-treatment consisting essentially of subjecting the laminate to a reduced pressure of 5 Torr or less and maintaining the laminate at said reduced pressure for 5 to 40 minutes;
• (c) subjecting the vacuum-treated laminate to thermocompression bonding at a reduced pressure of 5 Torr or less while heating the vacuum-treated laminate at a temperature at which the sealing resin of the laminate is crosslinked;
• and
• (d) cooling the thermocompressed laminate to contact bond the laminate.

A process for producing a semiconductor device by subjecting a laminate comprising a semiconductor element and a sealing resin which are interposed between a front surface member and a back face member to thermocompression bonding under reduced pressure, wherein said process comprises the steps of:

• (a) subjecting said laminate to a vacuum-treatment at a reduced pressure of 5 Torr or less and maintaining the laminate at said reduced pressure for 5 to 40 minutes;
• (b) subjecting the vacuum-treated laminate to thermocompression bonding at a reduced pressure of 5 Torr or less;
• and
• (c) cooling the thermocompressed laminate to contact bond the laminate,
• wherein the sealing resin is positioned between the semiconductor element and the surface member, the sealing resin comprises ethylene-vinyl acetate copolymer, and the ethylene-vinyl acetate copolymer is crosslinked by an organic peroxide.

A process for producing a semiconductor device by subjecting a laminate comprising a semiconductor element and a sealing resin which are interposed between a front surface member and a back face member to thermocompression bonding under reduced pressure, wherein said process comprises the steps of:

• (a) subjecting said laminate to a vacuum-treatment at a reduced pressure of 5 Torr or less and maintaining the laminate at said reduced pressure for 5 to 40 minutes;
• (b) subjecting the vacuum-treated laminate to thermocompression bonding at a reduced pressure of 5 Torr or less;
• and
• (c) cooling the thermocompressed laminate to contact bond the laminate,
• wherein the surface member comprises a transparent film composed of a fluorine-containing polymer.

A process for producing a semiconductor device by subjecting a laminate comprising a semiconductor element and a sealing resin which are interposed between a front surface member and a back face member to thermocompression bonding under reduced pressure, wherein said process comprises the steps of:

• (a) subjecting said laminate to a vacuum-treatment at a reduced pressure of 5 Torr or less and maintaining the laminate at said reduced pressure far 5 to 40 minute;
• (b) subjecting the vacuum-treated laminate to thermocompression bonding at a reduced pressure of 5 Torr or less;
• and
• (c) cooling the thermocompressed laminate to contact bond the laminate,
• wherein the thermocompression bonding of the laminate comprises the steps of supporting the laminate between a mounting table and a flexible member, and evacuating a space between said mounting table and said flexible member to reduce the pressure therein and compress the laminate, and
• wherein the flexible member is a silicone rubber sheet.

A process for producing a semiconductor device by subjecting a laminate comprising a semiconductor element and a sealing resin which are interposed between a front surface member and a back face member to thermocompression bonding under reduced pressure, wherein said process comprises the steps of:

• (a) subjecting said laminate to a vacuum-treatment at a reduced pressure of 5 Torr or less and maintaining the laminate at said reduced pressure for 5 to 40 minutes;
• (b) subjecting the vacuum-treated laminate to thermocompression bonding at a reduced pressure of 5 Torr or less;
• and
• (c) cooling the thermocompressed laminate to contact bond the laminate,
• wherein the thermocompression bonding of the laminate comprises the steps of supporting the laminate between a mounting table and a flexible member, and evacuating a space between said mounting table and said flexible member to reduce the pressure therein and compress the laminate, and
• wherein the pressure is reduced on both sides of the flexible member, and the thermocompression bonding of the laminate includes a step of increasing the pressure on the side of the flexible member which is opposite to the mounting table.