Methods for reducing a dielectric constant of a dielectric film and for forming a low dielectric constant porous film
AssigneeNano-Architect Research Corporation
InventorsHong-Ji Lee, David Guang-Kai Jeng
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Abstract
Disclosed is a non-solvent method for reducing a dielectric constant of a dielectric film. The dielectric film, which can be formed on a substrate by a spin-on coating or a chemical vapor deposition (CVD), is placed in an atmosphere of an inert gas at a high pressure or in a supercritical fluid state, and then the pressure of the atmosphere is rapidly released to form nanopores on the surface of the dielectric film, whereby the dielectric constant thereof is reduced.
Claims29
A non-solvent method for reducing a dielectric constant of a non-solvent dielectric film, comprising the steps of:
- (a) placing the solvent-free dielectric film in an atmosphere of an inert gas at a high pressure;
- and
- (b) making the pressure of the atmosphere of the inert gas rapidly released to form pores on the solvent-free dielectric film.
A non-solvent method for producing a low dielectric constant porous film, comprising the steps of:
- (a) forming a solvent-free dielectric film on a semiconductor substrate;
- (b) placing the semiconductor substrate with the solvent-free dialectic film in an atmosphere of an inert gas at a high pressure;
- and
- (c) making the pressure of the atmosphere of the inert gas rapidly released to form pores on the solvent-free dielectric film.
Dependencies are inferred from the claim text.