Method of forming porous film and material for porous film
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorNobuo Aoi
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Abstract
An organic acid containing solution obtained by adding an organic acid having an alkyl group to a solution including silanol condensate particles is applied on a substrate so as to form a coating film. The coating film is heat treated so as to form a porous film.
Claims20
A method of forming an interlayer insulating film which comprises a porous film and is included in a semiconductor device, the method comprising the steps of:
- forming a coating film containing an organic acid having an alkyl group by applying, on a semiconductor substrate, an organic acid containing solution obtained by adding said organic acid to a solution including silanol condensate particles;
- and
- forming a porous film from said coating film by conducting a heat treatment on said coating film and vaporizing said organic acid.
A method of forming an interlayer insulating film which comprises a porous film and is included in a semiconductor device, the method comprising the steps of:
- forming a coating film containing an organic acid having halogen by applying, on a semiconductor substrate, an organic acid containing solution obtained by adding said organic acid to a solution including silanol condensate particles;
- and
- forming a porous film from said coating film by conducting a heat treatment on said coating film and vaporizing said organic acid.
A method of forming an interlayer insulating film which comprises a porous film and is included in a semiconductor device, the method comprising the steps of:
- forming a coating film containing an organic acid having a hydroxyl group by applying, on a semiconductor substrate, an organic acid containing solution obtained by adding said organic acid to a solution including silanol condensate particles;
- and
- forming a porous film from said coating film by conducting a heat treatment on said coating film and vaporizing said organic acid.
A method of forming an interlayer insulating film which comprises a porous film and is included in a semiconductor substrate, the method comprising the steps of:
- forming a coating film containing two or more organic acids having hydroxyl groups by applying, on a semiconductor substrate, an organic acid containing solution obtained by adding said two or more organic acids to a solution including silanol condensate particles;
- and
- forming a porous film from said coating film by conducting a heat treatment on said coating film and vaporizing said organic acids.
Dependencies are inferred from the claim text.