Method of forming dielectric layer with low dielectric constant
AssigneeUnited Microelectronics Corp.
InventorsYih-Jau Chang, Chen-Chung Hsu
Life of this patent
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Abstract
A method for forming a dielectric layer with a low dielectric constant (low-k) is described. A semiconductor substrate is provided. A dielectric layer is formed on the substrate. A doping step is performed on the dielectric layer. An annealing step is performed and a gas is simultaneously fed so that the dielectric layer is converted into the low-k dielectric layer.
Claims19
A method for forming a dielectric layer with a low dielectric constant (low-k), comprising:
- providing a semiconductor substrate;
- forming a first dielectric layer on the substrate;
- performing a doping step on the first dielectric layer, wherein the first dielectric layer is doped with an ion comprising CF4, CClF3, CCl2F2, CCl3F;
- and
- performing an annealing step while simultaneously feeding a gas so that the first dielectric layer is converted into the low-k dielectric layer.
A method for forming a dielectric layer with a low dielectric constant (low-k), comprising:
- providing a semiconductor substrate;
- forming a dielectric layer on the substrate;
- performing a doping step on the dielectric layer, so that the dielectric layer is doped with an ion selected from a group consisting of CF4, CClF3, CCl2F2, or CCl3F;
- and
- performing an annealing step and simultaneously feeding a gas so that a part of the dielectric layer is converted into the low-k dielectric layer.
A method for forming a dielectric layer with a low dielectric constant (low-k), comprising:
- providing a semiconductor substrate;
- forming a dielectric layer on the substrate;
- partially doping the dielectric layer with an ion chosen from a group consisting of CF4, CClF3, CCl2F2, or CCl3F;
- and
- performing an annealing step simultaneously fed with an oxygen gas after the step of partially doping the dielectric layer, so that a part of the dielectric layer is converted into the low-k dielectric layer.
Dependencies are inferred from the claim text.