Semiconductor device and a process for forming a protective insulating layer thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsKouji Oda, Seiji Ohkura
Life of this patent
Estimating the term…
Abstract
A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance.
Claims19
A process for manufacturing a semiconductor device comprising the steps of:
- forming, on at least a semiconductor device element and/or at least one lead layer on a semiconductor substrate, a lower layer of an organic-silane-based silicon oxide film, having a thickness of 0.3 to 0.6 μm, by a chemical vapor deposition process in plasma using organic silane and oxygen as main component gases;
- and
- forming, above said organic-silane-based silicon oxide film, an upper layer of a silane-based silicon oxide film containing excessive silicon, having a thickness of 0.7 to 1.0 μm, by a chemical vapor deposition process in plasma using silane and nitrous oxide as main component gases;
- wherein said lower layer of an organic-silane-based silicon oxide film and said upper layer of a silane-based silicon oxide film containing excessive silicon constitutes a protective insulating layer covering said semiconductor device element and/or said lead layer.
A process for manufacturing a semiconductor device comprising the steps of:
- forming at least one semiconductor element on a semiconductor substrate;
- forming an interlayer insulating film on said semiconductor element;
- forming at least one lead layer including a plurality of electrical leads on said interlayer insulating film;
- forming a lower layer an organic-silane-based silicon oxide film having a thickness of 0.3 to 0.6 μm on said lead layer,
- forming an upper layer of a silane-based silicon oxide film containing excess silicon having thickness of 0.7 to 1.0 μm on or above said lower layer of an organic-silane-based silicon oxide film;
- wherein said lower layer of an organic-silane-based silicon oxide film and said upper layer of a silane-based silicon oxide film constitutes a protective insulating layer having a thickness of about 1.3 μm to cover all of said lead layer or layers.
A process for manufacturing a semiconductor device comprising the steps of:
- forming at least one semiconductor element on a semiconductor substrate;
- forming an interlayer insulating film on said semiconductor element;
- forming a lead layer including a plurality of electrical leads on said interlayer insulating film;
- forming a lower layer an organic-silane-based silicon oxide film having a thickness of 0.3 to 0.6 μm on said lead layer,
- forming an upper layer of a silane-based silicon oxide film containing excess silicon having thickness of 0.7 to 1.0 μm on or above said lower layer of an organic-silane-based silicon oxide film;
- wherein said lower layer of an organic-silane-based silicon oxide film and said upper layer of a silane-based silicon oxide film constitutes a protective insulating layer having a thickness of about 1.3 μm to cover said lead layer.
Dependencies are inferred from the claim text.