Chemically preventing copper dendrite formation and growth by spraying
AssigneeAdvanced Micro Devices, Inc.
InventorsDiana M. Schonauer, Steven C. Avanzino, Kai Yang
Life of this patent
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Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by spraying the wafer with a chemical agent. Embodiments include removing up to 60Å of silicon oxide by spraying the wafer with an acidic solution, such as a solution comprising acetic acid and ammonium fluoride.
Claims21
A method of manufacturing a semiconductor device on a wafer, the method comprising:
- forming a copper (Cu) or Cu alloy interconnection pattern comprising a dense array of spaced apart Cu or Cu alloy lines bordering an open dielectric field on a surface of the wafer;
- and
- spraying the wafer with a chemical agent to remove a sufficient amount of dielectric material from the open dielectric field to prevent or substantially reduce formation and/or growth of Cu or Cu compound dendrites from the lines into the open dielectric field.
A method of preventing or substantially reducing the formation and/or growth of dendrites emanating from copper (Cu) or Cu alloy lines into a bordering open dielectric field on a wafer surface, the method comprising spraying the wafer with a chemical agent to remove a portion of dielectric material from the surface of the open dielectric field and from between the lines.
Dependencies are inferred from the claim text.