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US 6,319,826 B1Granted
Method of fabricating barrier layer
AssigneeUnited Microelectronics Corp.
InventorsMing-Shing Chen, Yung-Chieh Kuo
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Abstract
A method of forming a barrier layer is described. A dielectric layer is formed on a substrate. The dielectric layer comprises an opening exposing a portion of the substrate. A metallic layer, which is conformal to the opening, is formed on the dielectric layer. A first metallic nitride layer, which is conformal to the opening, is formed on the first metallic layer by chemical vapor deposition. The second metallic nitride layer, which is conformal to the opening, is formed on the first metallic nitride layer.
Claims20
A method for fabricating a barrier layer, comprising:
- forming a dielectric layer on a substrate, wherein the dielectric layer comprises an opening exposing a portion of the substrate;
- forming a conformal metallic layer on the dielectric layer and a surface of the opening, wherein a thickness of the metallic layer on a bottom of the opening is sufficient to prevent an over-consumption of the metallic layer in a subsequent rapid thermal process (RTP) and a thickness of a portion of the metallic on the dielectric layer is different from a thickness of a portion of the metallic layer on the bottom of the opening;
- forming a conformal first metallic nitride layer on the metallic layer;
- and
- forming a compact conformal second metallic nitride layer on the first metallic nitride layer by deposition, wherein the conformal second metallic nitride layer is sufficiently compact to prevent the conformal first metallic nitride layer from reacting with a nitrogen gas.
2 more elements
A method of forming a barrier layer, comprising steps of:
- forming a dielectric layer on a substrate, wherein the dielectric layer comprises an opening exposing a portion of the substrate;
- forming a conformal metallic layer over the substrate, covering the dielectric layer and a surface of the opening, wherein a thickness of the metallic layer at a bottom of the opening is about 70 angstroms to about 130 angstroms and a thickness of the metallic layer on the top surface of the dielectric layer is about 300 angstroms to about 400 angstroms;
- forming a first metallic nitride layer on the metallic layer by chemical vapor deposition, wherein the first metallic nitride layer is conformal to the opening;
- and
- forming a second metallic nitride layer on the first metallic nitride layer, wherein the second metallic nitride layer is conformal to the opening and is compact to prevent an increase of a contact resistance.
2 more elements
A method of fabricating a metallic plug, comprising steps of:
- forming a dielectric layer on a substrate, wherein the dielectric layer comprises an opening exposing a portion of the substrate;
- forming a thick first metallic layer on the dielectric layer and on a surface of the opening by performing a step of ionized metallization plasma deposition, wherein the thick first metallic layer is sufficient to prevent an over-consumption of the first metallic layer in a subsequent rapid thermal process (RTP) and a thickness of the metallic layer at a bottom of the opening is about 70 angstroms to about 130 angstroms and a thickness of the metallic layer on the top surface of the dielectric layer is about 300 angstroms to about 400 angstroms;
- forming a first metallic nitride layer on the first metallic layer by chemical vapor deposition, wherein the first metallic nitride layer is conformal to the opening;
- forming a compact second metallic nitride layer on the first metallic nitride layer by a deposition process under conditions different from those used in the chemically vapor deposited first metallic nitride layer, wherein the second metallic nitride layer is sufficiently compact to prevent the first metallic nitride layer from reacting with a nitrogen gas when the second metallic nitride layer is exposed to the nitrogen gas;
- forming a second metallic layer on the second metallic nitride layer to fill the opening;
- and
- removing a portion of the second metallic layer to form a metallic plug.
4 more elements
Dependencies are inferred from the claim text.