Metallization process of semiconductor device

A metallization process of a semiconductor device comprising the steps of:

• providing a semiconductor substrate having a junction region;
• forming an insulating layer on the upper of the semiconductor substrate;
• forming a contact hole by patterning the insulating layer so as to expose one portion of the junction region;
• forming a glue layer on the upper of the insulating layer, and at the bottom and inner surfaces of the contact hole;
• forming a barrier metal layer on the glue layer;
• forming a metal layer on the barrier metal layer;
• and
• forming an Mg layer as a solid solution layer on the metal layer,
• wherein the Mg layer is deposited at a temperature that the Mg is melted to the metal layer in the step of forming the Mg layer.

A metallization process of a semiconductor device comprising the steps of:

• providing a semiconductor substrate having a junction region;
• forming an insulating layer on the upper of the semiconductor substrate;
• forming a contact hole by patterning the insulating layer so as to expose one portion of the junction region;
• forming a glue layer on the upper of the insulating layer, and at the bottom and the inner surfaces of the contact hole;
• forming a barrier metal layer on the glue layer;
• forming a first metal layer on the barrier metal layer;
• forming an Mg layer as a solid solution layer on the first metal layer;
• forming a second metal layer on the Mg layer;
• and
• forming a metal wiring layer having more liquidity than that of the metal layers, by melting the Mg layer to the first and the second metal layers.