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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Cheng Chen, Chia-Shiung Tsai, Shau-Lin Shue, Hun-Jan Tao
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A method for etching of sub-quarter micron openings in insulative layers for contacts and vias is described. The method uses hardmask formed of carbon enriched titanium nitride. The hardmask has a high selectivity for etching contact and via openings in relatively thick insulative layers. The high selectivity requires a relatively thin hardmask which can be readily patterned by thin photoresist masks, making the process highly desirable for DUV photolithography. The hardmask is formed by MOCVD using a metallorganic titanium precursor. By proper selection of the MOCVD deposition conditions, a controlled amount of carbon is incorporated into the TiN film. The carbon is released as the hardmask erodes during plasma etching and participates in the formation of a protective polymer coating along the sidewalls of the opening being etched in the insulative layer. The protective sidewall polymer inhibits lateral chemical etching and results in openings with smooth, straight, and near-vertical sidewalls without loss of dimensional integrity.
A method for etching an opening in an insulative layer on a semiconductor wafer comprising:
A method for forming a contact to a semiconductive device on a silicon wafer comprising:
A method for forming a via opening in an insulative layer on a silicon wafer comprising:
The method of 26 claim wherein said photoresist is between about 1,000 and 5,000 Angstroms thick.
Dependencies are inferred from the claim text.