Fabrication method for dual damascene structure
AssigneeWinbond Electronics Corp.
InventorHaochieh Liu
Life of this patent
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Abstract
A fabrication method for a dual damascene structure is described wherein a substrate covered by a HSQ layer is provided. An E-beam curing is conducted on the HSQ layer where the via hole is to be formed. Photolithography and etching are further conducted on the HSQ layer to form a trench. Since the E-beam cured HSQ layer and the thermally cured HSQ layer have a high etching selectively ratio, the HSQ layer that has not been E-beam cured can be wet etched to from a via hole. A dual damascene structure is formed after filling the trench and the via hole with a conductive material, wherein either the via hole or the trench can be first formed.
Claims13
A fabrication method for a dual damascene structure comprising:
- providing a substrate;
- forming a hydrogen silsequioxane layer (HSQ) to cover the substrate;
- thermal curing the HSQ layer;
- forming a hard mask layer on the thermal cured HSQ layer to cover a portion of the thermal cured HSQ layer;
- performing an E-beam curing on a remaining exposed portion of the thermal cured HSQ layer to transform the remaining exposed portion of the thermal cured HSQ layer into an E-beam cured HSQ layer;
- removing the hard mask;
- performing a wet etching to selectively remove the thermal cured HSQ layer to form a via hole and to expose a part of the substrate;
- forming a patterned photoresist layer on the E-beam cured HSQ layer and a photoresist layer partially filling the via to cover the exposed past of the substrate, wherein the patterned photoresist layer exposes a part of the E-beam cured HSQ layer and the via hole;
- selectively removing the exposed part of the E-beam cured HSQ layer to form a trench above the via hole;
- removing the photoresist layer on the E-beam cured HSQ layer and the photoresist layer in the via hole;
- and
- forming a conductive material to fill the trench and the via hole.
A fabrication method for a dual damascene structure, comprising:
- providing a substrate;
- forming a HSQ layer to cover the substrate;
- thermal curing the HSQ layer;
- forming a hard mask layer on the HSQ layer to cover a portion of the thermal cured HSQ layer;
- E-beam curing, a remaining exposed portion of the thermal cured HSQ layer to transform the remaining exposed thermal cured HSQ layer into an E-beam cured HSQ layer;
- removing the hard mask layer;
- forming a patterned photoresist layer on the E-beam cured HSQ layer, wherein the patterned photoresist layer exposes the thermal cured HSQ layer;
- removing a portion of the E-beam cured HSQ layer and a portion of the thermal cured HSQ layer using the photoresist layer as a mask to form a trench;
- removing the photoresist layer;
- wet etching the remaining thermal cured HSQ layer to form a via hole under the trench and exposing a portion of the substrate;
- and
- forming a conductive material to- fill the trench and the via hole.
Dependencies are inferred from the claim text.