Method for cleaning a substrate and cleaning solution
AssigneeNEC Corporation
InventorsTomoko Wake, Hidemitsu Aoki
Life of this patent
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Abstract
A method for cleaning a substrate having a patterned metal layer formed thereon includes the step of removing metallic contaminants from the substrate by use of an aqueous solution of carboxylic acid having a chelating action. The aqueous solution contains one of water-soluble carboxylic acid, ammonium carboxylate, and carboxylic acid having an amino group and the the water-soluble carboxylic acid is one of acetic acid, formic acid, citric acid, and oxalic acid. The patterned metal layer is made of one of a transition metal and a compound of a transition metal with one of Si (silicon), N (nitrogen) and O (oxygen).
Claims16
A method of cleaning metallic contamination from a gate oxide film during formation of a transistor on a semiconductor substrate, the method comprising the steps of:
- forming a gate electrode for the transistor on the gate oxide film, the gate electrode having a metallic portion and the gate oxide film having metallic contamination thereon;
- and
- after forming the gate electrode and before thermally treating the substrate, washing the gate oxide film with a cleaning solution consisting essentially of an aqueous solution of a carboxylic acid that has a chelating action to remove the metallic contamination from the gate oxide film.
A method of cleaning metallic contamination from a gate oxide film during formation of a transistor on a semiconductor substrate, the method comprising the steps of:
- forming a gate electrode for the transistor on the gate oxide film, the gate electrode having a metallic portion and the gate oxide film having metallic contamination thereon;
- and
- after forming the gate electrode and before thermally treating the substrate, washing the gate oxide film with a cleaning solution consisting essentially of an aqueous solution of a carboxylic acid that has a chelating action and a chelating agent to remove the metallic contamination from the gate oxide film.
Dependencies are inferred from the claim text.