Manufacturing method for semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorsMakoto Nakazawa, Toshio Nagata
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Abstract
A lower capacitor electrode is formed on an interlayer dielectric, and then a resultant specimen is subjected to reduction and thermal nitriding in an ammonia gas atmosphere in a deposition chamber wherein pressure has been reduced to a range from 533 Pa to 1333 Pa. A silicon nitride film is then formed on the lower electrode and the interlayer dielectric. A time for carrying out the reduction and thermal nitriding is longer than a film thickness saturation time of the silicon nitride film formed on the interlayer dielectric.
Claims12
A method of manufacturing a semiconductor device that includes a capacitor electrode and a silicon nitride film as a capacitor dielectric film, said method comprising:
- forming a lower electrode on an interlayer dielectric;
- treating the lower electrode in an ammonia gas atmosphere in a deposition chamber for a given period of time after a pressure within the chamber has been reduced to a given pressure so as to cause the lower electrode to be reduced and thermally nitrided;
- and
- forming a silicon nitride film on said lower electrode and said interlayer dielectric after the lower electrode has been reduced and thermally nitrided;
- wherein the given period of time is longer than a period of time which elapses from a start of nitriding of said silicon nitride film to a nitride saturation of said silicon nitride film.
A method of manufacturing a semiconductor device that includes a capacitor electrode and a silicon nitride film as a capacitor dielectric film, said method comprising:
- forming a lower electrode on an interlayer dielectric;
- treating the lower electrode in an ammonia gas atmosphere in a deposition chamber for a given period of time after a pressure within the chamber has been reduced to a pressure range from 533 Pa to 1333 Pa so as to cause the lower electrode to be reduced and thermally nitrided;
- and
- forming a silicon nitride film on said lower electrode and said interlayer dielectric after the lower electrode has been reduced and thermally nitrided;
- wherein the given period of time is longer than a period of time which elapses from a start of nitriding of said silicon nitride film to a nitride saturation of said silicon nitride film.
Dependencies are inferred from the claim text.