Method for fabricating poly-spacers
AssigneeTSMC-Acer Semiconductor Manufacturing Corp.
InventorsShiou-han Liaw, Yau-feng Lo, Po-lung Chuang, Jia-ren Chen, Yen-hung Lai, Calvin Wu
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Abstract
A method for fabricating poly-spacers used in a semiconductor substrate, comprising: forming an undoped first polysilicon layer on the semiconductor substrate; performing a first ion implantation with a first angle to implant impurities into the first polysilicon layer; performing a second ion implantation with a second angle to implant the impurities into the first polysilicon layer; forming a second polysilicon layer on the first polysilicon layer; and etching the first polysilicon layer and the second polysilicon layer to form spacers.
Claims10
A method for fabricating poly-spacers used in a semiconductor substrate, comprising:
- forming an undoped first polysilicon layer on the semiconductor substrate;
- performing a first ion implantation with a first angle to implant impurities into said first polysilicon layer;
- performing a second ion implantation with a second angle to implant the impurities into said first polysilicon layer;
- forming a second polysilicon layer on said first polysilicon layer;
- and
- etching said first polysilicon layer and said second polysilicon layer to form spacers.
A method for fabricating poly-spacers used in a semiconductor substrate, comprising:
- forming an undoped first polysilicon layer on the semiconductor substrate;
- performing a first lithography step to form a first photoresist layer covering sections of the first polysilicon layer which is not to be implanted with impurities;
- performing a first ion implantation with a first angle to implant impurities into the first polysilicon layer;
- performing a second ion implantation with a second angle to implant the impurities into the first polysilicon layer;
- removing the first photoresist layer;
- forming a second polysilicon layer on the first polysilicon layer;
- performing a second lithography step to form a second photoresist layer covering sections of said second polysilicon layer which are to remain;
- etching the first polysilicon layer and the second polysilicon layer to form spacers;
- and
- removing the second photoresist layer.
Dependencies are inferred from the claim text.