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US 6,319,759 B1Granted
Method for making oxide
AssigneeInternational Business Machines Corporation
InventorsToshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, William H. Ma
Life of this patent
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Abstract
A method of forming oxide and gate oxide areas of differing thicknesses. The processes disclosed include using an electromagnetic wave light at differing exposure durations and/or different energy levels to create oxide of differing thicknesses on a layer. The electromagnetic wave is preferably a laser.
Claims28
A method of forming oxide, comprising the steps of:
- providing a layer;
- exposing a first area of the layer upon which oxide is to be grown to an electromagnetic wave and during a first exposure to form a first layer of oxide having a first thickness, wherein the electromagnetic wave has a first given power and is exposed to the first area for a first exposure duration;
- and
- exposing a second area of the layer upon which oxide is to be grown to an electromagnetic wave during a second exposure to form a second layer of oxide having a second thickness.
1 more element
A method of forming oxide, comprising the steps of:
- providing a layer;
- exposing a first area of the layer upon which oxide is to be grown to an electromagnetic wave to form a first layer of oxide having a first thickness;
- and
- exposing at least one other area of the layer upon which oxide is to be grown to an electromagnetic wave to form a second layer of oxide having a differing thickness than the first layer of oxide.
1 more element
A method of forming oxide comprising the steps of:
- providing a layer;
- exposing a first area of the layer upon which oxide is to be grown to an electromagnetic wave having a first power and first duration to form oxide of a first thickness;
- and
- exposing at least one other area of the layer upon which oxide is to be grown to an electromagnetic wave having at least one of a differing power and differing duration to form oxide having a thickness different than the first thickness.
1 more element
Dependencies are inferred from the claim text.