Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates

A method for the adhesion of a SiC-containing substrate to an underlying substrate in the formation of a semiconductor device, which comprises the steps of:

• (a) providing said SiC-containing substrate having a first and second major surface;
• (b) providing said underlying substrate having a first and second major surface;
• and
• (c) bonding with a bonding material one of the first and second major surface of said SiC-containing substrate to one of the first and second major surface of said underlying substrate, said bonded SiC-containing substrate-underlying substrate structure being adhered to the underlying substrate without substantial mechanical or thermal degradation at temperatures up to at least about 1000° C.

A method for the protective encapsulation and adhesion of a SiC-containing substrate and an underlying substrate, which comprises the steps of

• providing a Si carbide-containing semiconductor substrate having a first and second major surface;
• providing said underlying substrate having a first and second major surface;
• bonding with a bonding material at least one of the first and second major surface of said SiC-containing substrate to at least one of the first and second major surface of said underlying substrate being formed without substantial mechanical or thermal degradation at a temperature of at least 1000° C.;
• and
• coating at least one of the first and second major surface of said Si carbide-containing semiconductor substrate with a stable encapsulating layer which protects said semiconductor device from mechanical degradation and from thermal degradation at temperature of at least 1000° C.

A method for the protective encapsulation of a SiC-containing substrate and an underlying substrate, which comprises the steps of

• (a) providing a Si carbide-containing semiconductor substrate having a first and second major surface;
• (b) providing said underlying substrate having a first and second major surface;
• and
• (c) coating at least one of the first and second major surface of said Si carbide-containing semiconductor substrate at a temperature of less than about 700° C. and thereby forming a stable encapsulating layer, said stable encapsulating layer protecting said semiconductor device from mechanical degradation and from thermal degradation at a temperature of at least about 1000° C.

A method for adhesion of a SiC-containing substrate and an underlying substrate, which comprises the steps of

• (a) providing a Si carbide-containing semiconductor substrate having a first and second major surface;
• (b) providing said underlying substrate having a first and second major surface;
• and
• (c) bonding together with a bonding material at least one of the first and second major surface of said SiC-containing substrate to at least one of the first and second major surface of said underlying substrate, at a temperature of not more than about 700° C., said bonding together of said SiC-containing substrate to said underlying substrate being formed without substantial mechanical or thermal degradation at temperatures up to at least about 1000° C.