Formation of charge-coupled-device with image pick-up array

Abstract

A method and structure for manufacturing Charge-Coupled-Device (CCD) image pick-up devices. The method bonds a first wafer with a second wafer. The first wafer has a CCD layer on a first substrate, wherein the CCD layer includes a plurality of CCD pick-up image arrays. The CCD layer is thin, preferably in a range of 5 to 20 microns, while the substrate is relatively thicker (e.g., 300 microns). The first wafer also includes first conductive pads arranged in a pattern on a surface of the CCD layer such that each CCD array is conductively coupled to a plurality of the first conductive pads. The second wafer has a second substrate that includes a semiconductor material such as silicon, and second conductive pads according to the pattern on a surface of the second substrate. The first wafer is bonded with the second wafer to form a wafer composite, wherein the first conductive pads are joined to the second conductive pads in accordance with the pattern. Then, the first substrate is removed and the second wafer provides mechanical support for the CCD layer during the removal process, followed by dicing the wafer composite into a plurality of image pick-up devices such that each image pick-up device includes a CCD array of the CCD layer. The image pick-up devices may be used for photoimageing of objects.

Dependencies are inferred from the claim text.