Two-dimensionally arrayed quantum device fabrication method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorIchiro Yamashita
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Abstract
A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in a metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of the size of the metalloprotein complex. The diameter of the metal atom aggregates used in the quantum device is 7 nm or smaller, and the pitch of the metalloprotein complex is preferably from 11 to 14 nm.
Claims2
A method of fabricating a semiconductor light emitting device having p-type and n-type semiconductor layers and an activation layer formed on an insulating substrate, said method comprising:
- absorbing a metalloprotein complex onto an LB membrane developed on a surface of an aqueous solution, and placing the LB membrane having the metalloprotein complex adsorbed thereon on a surface of the insulating substrate which is durable to temperatures beyond a burn-out temperature of protein and has the activation layer on the surface thereof;
- burning out the protein through heat treatment in an inert gas that does not react with the insulating substrate;
- reducing metal atom aggregates in a reducing atmosphere;
- and
- forming quantum dots from the activation layer by plasma etching of the activation layer via masking the quantum dots.
Dependencies are inferred from the claim text.