Method for establishing differential injection conditions in mosfet source/drain regions based on determining the permitted amount of energy contamination with respect to desired junction depth
AssigneeNEC Corporation
InventorTomoko Matsuda
Life of this patent
Estimating the term…
Abstract
A method for establishing conditions of making an index representing characteristics of a MOSFET in a permitted range by means of differentially injecting ions into a wafer. The method includes the steps of: making a curve indicating an amount of energy contamination with respect to a junction depth, and determining a permitted amount of energy contamination with respect to a desired junction depth. A MOSFET having substantially no deterioration of the characteristics can be obtained by referring to the curve, and establishing a degree of vacuum of and/or a distance of a beam line.
Claims6
In a method for establishing conditions of making an index representing characteristics of a MOSFET in a permitted range by adjusting a degree of vacuum of a beam line and/or a distance of a beam line in an ion injection apparatus based on a condition in order to form source/drain regions of the MOSFET by means of differentially injecting ions into a wafer, the improvement comprising the steps of:
- plotting an amount of energy contamination with respect to a junction depth, and
- determining, as said condition, a permitted amount of energy contamination with respect to a desired junction depth.
Dependencies are inferred from the claim text.