High resolution crosslinkable photoresist composition, compatable with high base concentration aqueous developers method and for use thereof

A method of forming a pattern of photo resist which comprises:

• a film of an admixture comprising:
• a poly(4-hydroxyphenylethyl methacrylate phenolic resin;
• a glycoluril derivative having the general formula:
• in which R1 and R2 can be selected individually iiom the group consisting of alkyls having 1-6 carbons, alkenyls, alkoxy, aryls selected from the group consisting of phenyl, furyl, and thienyl, alkylaryls selected from the group consisiting of tolyl, xylyl, mesityl or CnH2n+1 C6H4-where n can be from 3-6, halogenated aryls, diphenyl ether and diphenylsulfide;
• a photoacid generator;
• an organic solvent;
• an organic base;
• imagewise exposing said film to ultraviolet light in a pattern to thereby cause generation of acid catalyst in said pattern;
• baking of said exposed film;
• and developing said photoresist in an aqueous developer of at least 0.26N concentration.

A composition of matter comprising an admixture of a poly(4-hydroxyphenylethyl methacrylate phenolic resin;

• a glycoluril derivative having the general formula:
• in which R1 and R2 can be selected individually from the group consisting of alkyls having 1-6 carbons, alkenyls, alkoxy, aryls selected from the group consisting of phenyl, furyl, and thienyl, alkylaryls selected from the group consisiting of tolyl, xylyl, mesityl or CnH2n+1 C6H4-where n can be from 3-6, halogenated aryls, diphenyl ether and diphenylsulfide;
• a photoacid generator;
• an organic solvent;
• an organic base.