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US 6,319,648 B1Granted
Dissolution inhibition resists for microlithography
AssigneeE. I. Du Pont de Nemours and Company
InventorArnost Reiser
Life of this patent
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Abstract
Improved dissolution inhibition resists for use in microlithography are disclosed herein. These resists are comprised of phenolic base resin(s) having increased inhibitability and which are suitable for use in resist formulations for microlithography and semiconductor applications.
Claims8
A positive-working photoresist composition comprising:
- (a) a polymer comprising a comonomer unit A having the structure:
- wherein R1, R2, R3, R4, and R5 can be the same or different and are selected from the group consisting of H, OH, and X;
- at least one of R1, R2, R3, R4, and R5 being OH;
- and at least one of R1, R2, R3, R4, and R5 being X;
- and
- X is selected from the group of substituents having a Hammett Substituent Constant in its position in relation to said at least one OH that is greater than or equal to 0.45, except that X is not nitro or SO3H;
- and
- (b) at least one photoactive component capable of making the photoresist composition be positive-working said photoactive component being a dissolution inhibitor.
5 more elements
A dissolution inhibition resist composition comprising:
- (a) a polymer comprising a comonomer unit A having the structure:
- wherein R1, R2, R3, R4, and R5 can be the same or different and are selected from the group consisting of H, OH, and X;
- at least one of R1, R2, R3, R4, and R5 being OH;
- and at least one of R1, R2, R3, R4, and R5 being X;
- and
- X is selected from the group of substituents having a Hammett Substituent Constant in its position in relation to said at least one OH that is greater than or equal to 0.45, except that X is not nitro or SO3H;
- and
- (b) at least one dissolution inhibitor.
5 more elements
Dependencies are inferred from the claim text.