Scaled interconnect anodization for high frequency applications
AssigneeAdvanced Micro Devices, Inc.
InventorsSergey Lopatin, Robin Cheung
Life of this patent
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Abstract
A method of forming a conductive line structure is provided. An adhesion layer is formed on a substrate surface. A seed layer is formed on the adhesion layer. A conductor is formed on the seed layer to form a partially complete structure. The partially complete structure is exposed to an electrolyte and undergoes an anodization process. At least a portion of the seed layer and a portion of the conductor are transformed to seed layer metal oxide and conductor metal oxide, respectively. At least a portion of the adhesion layer is transformed to an adhesion layer metal oxide and a further portion of the conductor is transformed to the conductor metal oxide. An outer metal layer is formed over the seed layer metal oxide and the conductor
Claims11
A conductive line structure, comprising:
- a substrate;
- an adhesion layer interposed between a conductor and the substrate;
- a conductor metal oxide substantially covering the conductor, the conductor metal oxide being formed from a portion of the conductor oxidized via an anodization process;
- and
- an outer metal blanket layer substantially covering the conductor metal oxide,
- wherein at least portions of the conductor metal oxide and outer metal layer are symmetric to a portion of the conductor projecting from a surface of the substrate.
A conductive line structure, comprising:
- a substrate;
- an adhesion layer interposed between a plurality of conductors and the substrate;
- a conductor metal oxide covering the plurality of conductors, the conductor metal oxide being formed from a portion of the conductor oxidized via an anodization process and at least portions of the conductor metal oxide being symmetric to portions of the plurality of conductors respectively projecting from a surface of the substrate;
- and
- an outer metal layer covering the anodized conductor metal oxide, at least portions of the outer metal layer being symmetric to the portions of the plurality of conductors respectively projecting from the surface of the substrate.
A conductive line structure, comprising:
- a substrate;
- an adhesion layer interposed between a plurality of conductors and the substrate, the adhesion layer including at least one of:
- tantalum, tantalum nitride, titanium and titanium nitride, the plurality of conductors including at least one of:
- titanium, titanium alloys, tungsten, tungsten alloys, aluminum, aluminum alloys, copper, copper alloys and polycrystalline silicon;
- a conductor metal oxide covering the plurality of conductors, the conductor metal oxide being formed from a portion of the conductor oxidized via an anodization process and at least portions of the conductor metal oxide being symmetric to portions of the plurality of conductors respectively projecting from a surface of the substrate;
- and
- an outer metal layer covering the anodized conductor metal oxide, at least portions of the outer metal layer being symmetric to the portions of the plurality of conductors respectively projecting from the surface of the substrate, the outer metal layer including at least one of:
- titanium, titanium alloys, tungsten, tungsten alloys, aluminum, aluminum alloys, copper, copper alloys and polycrystalline silicon.
Dependencies are inferred from the claim text.