Stable hydride source compositions for manufacture of semiconductor devices and structures

A method of depositing a metal M from a metal-containing precursor therefor, comprising using as a precursor a metal hydride derivative of the formula:

• YxMRy
• wherein:
• M is an z-valent metal selected from the group consisting of:
• Sc, Y, Ti, Zr, V, Nb, Hf, Ta, Al, Ga, Ge, In, Sb, Tl, Pb, Bi, Cr, Mn, Fe, Co, Ni, Cu, Zn, Mo, Tc, Ru, Rh, Pd, Ag, Cd, W, Re, Os, Ir, Pt, Au, and Hg,
• each Y is independently selected from the group consisting of hydrogen, deuterium (21H) isotope, and tritium (31H) isotope;
• R is independently selected from the group consisting of C1-C8 alkyl, C1-C8 perfluoroalkyl, C1-C8 haloalkyl, C6-C10 aryl, C6-C10 perfluoroarkyl, C6-C10 haloaryl, C6-C10 cycloalkyl, substituted C6-C10 aryl and halo;
• x is at least one;
• x+y=z;
• with the provisos that:
• at least one Y is either deuterium (21H) isotope or tritium (31H) isotope;
• and when the metal is Sb, said metal hydride derivative is selected from the group consisting of (i) Sb(31H)3, (ii) SbH(31H)2, (iii) SbH2(31H), (iv) Sb(21H)3, (v) SbH(21H)2, and (vi) SbH2(21H).