Method of synthesizing even diamond film without cracks
AssigneeKorea Institute of Science and Technology
InventorsJae-Kap Lee, Young Joon Baik, Kwang Yong Eun
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Abstract
A method of synthesizing an even free-standing diamond film without growth cracks is disclosed. The intrinsic tensile stress of a diamond film is compensated by an artificial compressive stress with a step down control of the deposition temperature during deposition. After a diamond film is deposited with a predetermined thickness at a deposition temperature, the deposition temperature is decreased in multiple steps during the deposition. The bending of the diamond wafer is minimized by using a tungsten substrate with higher elastic modulus than molybdenum.
Claims12
A method for synthesizing a diamond film, comprising the steps of depositing a diamond film in a predetermined thickness on a substrate at a deposition temperature, and at a fixed concentration of methane, by a chemical vapor deposition method;
- and
- depositing additional diamond film with the deposition temperature decreasing, while maintaining a fixed concentration of methane, to induce compressive stress to the diamond film during synthesizing.
A method for synthesizing a diamond film, comprising the steps of depositing a diamond film in a predetermined thickness on a substrate at a deposition temperature. and at a fixed concentration of methane, by a chemical vapor deposition method;
- and
- depositing additional diamond film with the deposition temperature increasing, while maintaining a fixed concentration of methane, to induce tensile stress to the diamond film during synthesizing.
Dependencies are inferred from the claim text.