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US 6,319,420 B1Granted
Method and apparatus for electrically endpointing a chemical-mechanical planarization process
AssigneeMicron Technology, Inc.
InventorDaniel B. Dow
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AssigneeMicron Technology, Inc.
InventorDaniel B. Dow
Estimating the term…
A method and apparatus for endpointing a planarization process of a microelectronic substrate. The apparatus can include a source of electrical power having first and second electrical contacts coupled to the microelectronic substrate to form a conductive path through the substrate. An impedance of the conductive path changes as conductive material is removed from the substrate during planarization. In one embodiment, one contact can be attached to an upper surface of the substrate and the other contact can be attached to an intermediate surface between the upper surface and a lower surface of the substrate. In another embodiment, both contacts are connected to the intermediate surface and in still another embodiment, one contact can be connected to a retainer adjacent the substrate. In yet another embodiment, the power source induces a current in the conductive material, and the endpoint is detected by detecting a change in the induced current as the conductive material is removed.
A method for detecting removal of a conductive material from a surface of a microelectronic substrate where the surface of the microelectronic substrate is the second of two surfaces and the microelectronic substrate has an intermediate surface between the two surfaces, the method comprising:
A method for detecting removal of a conductive material from a microelectronic substrate having first and second surfaces, the second surface being in electrical contact with a planarizing liquid disposed on a polishing pad, the method comprising:
A method for endpointing a planarization process of a microelectronic substrate having a first surface and a second surface opposite the first surface, the method comprising:
A method for detecting removal of conductive material from a surface of a microelectronic substrate during planarization, the method comprising:
A method for detecting the removal of conductive material from a microelectronic substrate during planarization, the microelectronic substrate having a first surface, a second surface opposite the first surface, and an intermediate surface between the first and second surfaces, the method comprising removing material having a first conductivity from the second surface of the microelectronic substrate to expose material having a second conductivity less than the first conductivity until an impedance of a conductive path initially extending from a point proximate to the first surface of the microelectronic substrate, through the microelectronic substrate to a point, proximate to the second surface of the microelectronic substrate and through a planarizing medium adjacent the microelectronic substrate to the intermediate surface of the microelectronic substrate increases.
A method for detecting removal of a conductive material from a microelectronic substrate having, a first surface, a second surface opposite the first surface with the conductive material, and an intermediate surface between the first and second surfaces, the method comprising:
A method for detecting removal of a conductive material from a surface of a microelectronic substrate, comprising:
Dependencies are inferred from the claim text.