Method and apparatus for cleaning low K dielectric and metal wafer surfaces
AssigneeLam Research Corporation
InventorsLinda (Tong) Jiang, Diane J. Hymes
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Abstract
Provided is a method for cleaning hydrophobic surfaces, such as low K dielectric organic or inorganic surfaces as well as metallization surfaces of a semiconductor wafer. The method includes: (a) applying a surfactant solution to the surface; (b) scrubbing the surface; and (c) spin-rinsing the surface of the substrate using de-ionized water to complete a removal of any contaminants from the surface. If needed, the surfactant solution can be mixed with a chemical enhancer, and the scrubbing can be performed in a brush system. The brush system may be configured to apply DI water using a through the brush (TTB) technique. The surfactant solution can be applied either using a drip technique or using the TTB technique.
Claims10
A method for cleaning an organic dielectric surface of a semiconductor substrate, comprising:
- applying a first mixture of de-ionized water and a surfactant formulation solution containing a surfactant and a chemical enhancer to the organic dielectric surface;
- scrubbing the organic dielectric surface using the first mixture;
- applying a second mixture of de-ionized water and a surfactant solution to the organic dielectric surface, wherein the second mixture does not include the chemical enhancer;
- scrubbing the organic dielectric surface using the second mixture;
- and
- spin-rinsing the semiconductor substrate using de-ionized water to complete a removal of any contaminants from the organic dielectric surface.
A method for cleaning an organic dielectric surface of a semiconductor substrate, comprising:
- applying a first de-ionized water to a first brush, and applying a surfactant formulation solution containing a surfactant and a chemical enhancer to the first brush by drip applying the surfactant formulation solution to the first brush, wherein the surfactant formulation solution mixes with the first de-ionized water to form a first mixture;
- applying the first mixture to the organic dielectric surface of the semiconductor substrate with the first brush, the applying being done by scrubbing the organic dielectric surface with the first brush using the first mixture in a first brush cleaning stage;
- applying a second de-ionized water to a second brush, and applying a surfactant solution, which does not include the chemical enhancer to the second brush, by drip applying the surfactant solution to the second brush, wherein the surfactant solution mixes with the second de-ionized water to form a second mixture;
- and
- applying the second mixture to the organic dielectric surface of the semiconductor substrate with the second brush, the applying being done by scrubbing the organic dielectric surface with the second brush using the second mixture in a second brush cleaning stage,
- wherein the above steps are configured to assist in cleaning the organic dielectric surface of the semiconductor substrate.
Dependencies are inferred from the claim text.