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AssigneeInternational Business Machines Corporation
InventorsRichard J. Lebel, Frederic Maurer, Rock Nadeau, Paul H. Smith, Jr., Hemantha K. Wickramasinghe, Theodore G. van Kessel
Estimating the term…
A system and method that integrates film thickness measurements with a chemical-mechanical polishing (CMP) spin-dry tool. By doing so, each wafer can be measured as it comes out of the previous CMP process. Thickness measurement feedback is provided, which controls processing of the wafer and also monitor operational status of a CMP polishing unit prior to completion of the wafer being polished, resulting in significant cost and cycle time reduction through the elimination of tool infrastructure and wafer handling by assuring proper tolerances of the CMP polishing unit are maintained.
A chemical-mechanical polishing (CMP) system, the system comprising:
A system for polishing a workpiece, said system comprising:
A method of integrated monitoring of tolerances of a chemical mechanical polishing (CMP) system using a spin-dry tool having at least one film thickness measurement probe mounted in an optical line-of-sight of a surface of a workpiece in said CMP spin-dry tool, said at least one probe operatively coupled to a system processor, the method comprising:
Dependencies are inferred from the claim text.