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US 6,317,444 B1Granted
Optical device including carbon-doped contact layers
AssigneeAgere System Optoelectronics Guardian Corp.
InventorsUtpal Kumar Chakrabarti, Robert Alan Hamm, Joseph Brian Seiler, Gleb E. Shtengel, Lawrence Edwin Smith
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Abstract
The invention is an optical device and method of fabrication which mitigates the problem of Zn migration in the cladding and waveguide regions. The contact region includes carbon, which acts as a p-type dopant in ternary semiconductor material. The contact layer is made of InGaAs or InGaAsP, and the invention is most advantageously used in an electroabsorption modulated laser or capped mesa buried heterostructure laser.
Claims8
An optical device comprising:
- a semiconductor waveguide region including an active region
- a cladding region including a dopant comprising Zn formed adjacent to the waveguide region;
- and adapted to provide waveguiding of light in the active region;
- and
- a semiconductor contact region selected from InGaAs and InGaAsP formed over the waveguide region, the contact region including a p-type dopant comprising carbon to provide sufficient conductivity to make low resistance contact with the waveguide region.
2 more elements
A method for fabricating an optical device comprising the steps of:
- epitaxially forming a semiconductor waveguide region over a substrate;
- forming a cladding region adjacent to said waveguide region, the cladding region including a dopant comprising Zn;
- and
- epitaxially forming a contact region selected from InGaAs and InGaAsP over the waveguide region, the contact region including a p-type dopant comprising carbon to provide a sufficient conductivity to make low resistance contact to the waveguide region.
1 more element
Dependencies are inferred from the claim text.