Non-volatile magnetic circuit

A method of sensing status of a non-volatile magnetic latch cell, which comprises:

• writing differing resistance states into magneto-resistive storage devices;
• resetting the latch cell by turning on a switch with a sense pulse to force the latch cell to a known state;
• regenerating the latch cell by turning off the switch and receiving inputs to the latch cell from the magneto-resistive storage devices;
• sensing a potential imbalance from the magneto-resistive storage devices during regeneration;
• amplifying the potential imbalance during regeneration;
• and
• reaching a logic high or logic low at the latch cell outputs.

An apparatus for data sensing in a non-volatile magnetic latch cell, which comprises:

• a cross-coupled inverter pair transistor latch cell;
• magneto-resistive storage devices, one connected to the source of one transistor in one inverter pair and the other connected to the source of one transistor in another inverter pair for providing the inputs to the latch cell;
• and
• a single transistor connected to control gates of each transistor of the latch circuit for data sensing in the latch circuit by amplifying a resistive imbalance created by the magneto-resistive storage devices.