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AssigneeAdvanced Technology Materials, Inc.
InventorsPeter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daniel J. Vestyck, Thomas H. Baum
Estimating the term…
A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
A ferroelectric PZT material, having a dimensionally scalable, pulse length scalable and/or E-field scalable character.
A ferroelectric PZT material having a dimensionally scalable character.
A ferroelectric PZT material having a pulse length scalable character.
A ferroelectric PZT material having an E-field scalable character.
A ferroelectric PZT material having a dimensionally scalable character and a pulse length scalable character.
A ferroelectric PZT material having a dimensionally scalable character and an E-field scalable character.
A ferroelectric PZT material having a pulse length scalable character and an E-field scalable character.
A ferroelectric PZT material, having a dimensionally scalable, pulse length scalable and E-field scalable character.
A ferroelectric PZT material, having a dimensionally scalable, pulse length scalable and/or E-field scalable character and a ferroelectric operating voltage below 2 Volts.
A ferroelectric PZT material, having at least one of Type 1 properties, which includes a dielectric relaxation defined by J−n log (time) wherein n is greater than 0.5.
A ferroelectric PZT material, having at least three of Type 1 properties.
A ferroelectric PZT material, having all of said Type 1 properties.
A ferroelectric PZT material, having at least one of Type 2 properties, which includes retention.
A ferroelectric PZT material, having at least one of Type 2 properties, which includes cycling fatigue of ferroelectric polarization.
A ferroelectric PZT material, having at least four of Type 2 properties.
A ferroelectric PZT material, having all of said Type 2 properties.
A ferroelectric PZT material, having (1) a dimensionally scalable, pulse length scalable and/or E-field scalable character;
A microelectronic device structure, comprising:
Dependencies are inferred from the claim text.