Interconnect for testing semiconductor components and method of fabrication

A method for fabricating an interconnect for a semiconductor component having a contact comprising:

• providing a substrate having a first side and an opposing second side;
• forming an electrically insulating, resilient polymer layer on the first side having a thickness;
• forming a recess in the polymer layer having a depth equal to the thickness, by etching or developing the polymer layer to an endpoint on the first side;
• forming a conductive layer within the recess;
• forming an opening through the substrate to the second side;
• forming a conductive material within the opening in electrical communication with the conductive layer;
• forming an electrically conductive bump in the recess and on the conductive layer;
• and
• forming an external contact on the second side in electrical communication with the conductive material.

A method for fabricating an interconnect for a semiconductor component having a plurality of contacts comprising:

• providing a substrate having a face and a back side;
• depositing an electrically insulating, resilient polymer layer on the face;
• forming a plurality of interconnect contacts on the polymer layer comprising recesses, and conductive layers on the recesses configured to electrically engage the contacts;
• forming a plurality of conductive members in the substrate in electrical communication with the conductive layers;
• forming a plurality of external contacts on the back side in electrical communication with the conductive members;
• providing a support plate comprising an opening and a lip configured to support the substrate;
• mounting the substrate to the support plate with the interconnect contacts projecting from the opening, and the substrate movable in a z-direction;
• and
• placing the external contacts in physical and electrical contact with a plurality of spring loaded electrical connectors configured to bias the substrate against the component and to allow movement of the substrate in the z-direction.

A method for fabricating an interconnect for a semiconductor component having a plurality of contacts comprising:

• providing a substrate having a face and a backside;
• depositing an electrically insulating, resilient photoimageable polymer layer on the face having a thickness;
• developing the polymer layer to form a plurality of recesses therein;
• endpointing the developing step on the face such that the recesses have a depth equal to the thickness;
• depositing a plurality of conductive layers in the recesses;
• forming a plurality of conductive members in the substrate in electrical communication with the conductive layers;
• and
• forming a plurality of external contacts on the backside in electrical communication with the conductive members.