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US 6,314,013 B1Granted
Stacked integrated circuits
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
Estimating the term…
Abstract
System modules are described which include a stack of interconnected semiconductor dies. The semiconductor dies are interconnected by micro bump bonding of coaxial lines that extend through the thickness of the various dies. The coaxial lines also are selectively connected to integrated circuits housed within the dies. In one embodiment, a number of memory dies are interconnected in this manner to provide a memory module.
Claims25
A method for interconnecting integrated circuits to form a system module, the method comprising:
- selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of a plurality of semiconductor chips, each semiconductor chip having an integrated circuit that is formed in at least one working surface of the semiconductor chip;
- selectively aligning the plurality of semiconductor chips to form a stack;
- and
- for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip.
1 more element
A method for interconnecting memory circuits to form a memory module, the method comprising:
- selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of a plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip;
- selectively aligning the plurality of semiconductor chips to form a stack;
- and
- for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip.
1 more element
A method for interconnecting a plurality of semiconductor dies to form a memory cube, the method comprising:
- selectively forming mircobumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor dies, each semiconductor die;
- selectively aligning the plurality of semiconductor dies to form a stack;
- and
- for each interface between adjacent semiconductor dies in the stack, bonding the microbumps on the surface of one semiconductor die with the microbumps on the surface of the other, adjacent semiconductor die.
1 more element
A method for forming an information handling system, the method comprising:
- providing a processor circuit;
- interconnecting a plurality of semiconductor chips to form a memory module, the method comprising:
- selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip;
- selectively aligning the plurality of semiconductor chips to form a stack;
- for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip;
- and
- communicatively coupling the processor circuit to the memory module.
4 more elements
A method for interconnecting a plurality of semiconductor chips to form a memory module, the method comprising;
- forming a plurality of coaxial conductors, comprising;
- removing material from each semiconductor chip to form a hole through the thickness of each semiconductor chip, the hole having an inner wall;
- forming an outer conductor on the inner wall of the hole;
- forming an insulator layer radially adjacent the outer conductor;
- and
- filling in the remaining space of the hole with a conducting material to form a center conductor
- selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip;
- selectively aligning the plurality of semiconductor chips to form a stack;
- and
- for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the mircobumps on the surface of the other, adjacent semiconductor chip.
7 more elements
The method for interconnecting a plurality of semiconductor chips to form a memory module, the method comprising:
- forming a plurality of coaxial conductors, comprising:
- removing material from the chip to form a hole through the thickness of the chip, the hole having an inner wall;
- forming an outer conductor on the inner wall of the hole;
- forming an insulator layer radially adjacent the outer conductor comprising:
- filling in the remaining space of the hole with polysilicon;
- coating the first and second sides of the chip with a layer of aluminum;
- heating the chip to an anneal temperature, causing substitution of aluminum for polysilicon;
- and
- removing excess aluminum and polysilicon from the first and second sides of the semiconductor chip
- selectively forming mircobumps on first and second ends of the plurality coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip;
- selectively aligning the plurality of semiconductor chips to form a stack;
- and
- for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip.
10 more elements
A method for interconnecting a plurality of semiconductor chips to form a memory module, the method comprising:
- forming a plurality of coaxial conductors, comprising:
- removing material from the chip to form a hole through the thickness of the chip, the hole having an inner wall;
- forming an outer conductor on the inner wall of the hole;
- forming an insulator layer radially adjacent the outer conductor;
- filling in the remaining space with aluminum to form a center conductor comprising:
- filling in the remaining space of the hole with polysilicon;
- coating the first and second sides of the chip with a layer of aluminum;
- coating a layer of titanium on top of the layer of aluminum;
- heating the chip to an anneal temperature of about 450 degrees Celsius, causing substitution of aluminum for polysilicon;
- and
- removing excess aluminum and polysilicon from the first and second sides of the semiconductor chip
- selectively forming mircobumps on first and second ends of the plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip;
- selectively aligning the plurality of semiconductor chips to form a stack;
- and
- for each interface between adjacent semiconductor chips in the stack, bonding the mircobumps on the surface of one semiconductor chip with the mircobumps on the surface of the other, adjacent semiconductor chip.
12 more elements
Dependencies are inferred from the claim text.