Porous silicon oxycarbide integrated circuit insulator

An integrated circuit formed on a substrate comprising:

• a plurality of active circuit elements formed on the substrate;
• a plurality of first conductors interconnecting ones of the transistors;
• and
• a silicon oxycarbide insulator insulating portions of the first conductors from the active circuit elements.

An integrated circuit formed on a substrate, comprising:

• a plurality of transistors formed on the substrate;
• a plurality of first conductors interconnecting ones of the transistors;
• and
• a silicon oxycarbide insulator insulating portions of the first conductors from the transistors.

An integrated circuit formed on a substrate, comprising:

• a plurality of transistors formed on the substrate;
• a first conductive layer comprising a plurality of first conductors interconnecting ones of the transistors;
• and
• a silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors.

An integrated circuit formed on a substrate, comprising:

• a plurality of active device areas formed on the substrate;
• a plurality of first conductors interconnecting ones of the active device areas;
• a silicon oxycarbide insulator insulating portions of the first conductors layer from the active device areas;
• a second conductor;
• and
• wherein the silicon oxycarbide insulator insulates portions of the first conductors from portions of the second conductor.

An integrated circuit formed on a substrate, comprising:

• a plurality of transistors formed on the substrate;
• a plurality of first conductors interconnecting ones of the transistors;
• and
• a silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors;
• a second conductor;
• and
• wherein the silicon oxycarbide insulator insulates portions of the first conductor from portions of the second conductor.

An integrated circuit formed on a substrate, comprising:

• a plurality of transistors formed on the substrate;
• a first conductive layer comprising a plurality of first conductors interconnecting ones of the transistors;
• a silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors;
• a second conductor;
• and
• wherein the silicon oxycarbide insulator insulates portions of the first conductor from portions of the second conductor.

An integrated circuit formed on a substrate, comprising:

• a plurality of transistors formed on the substrate;
• a first conductive metal layer comprising a plurality of first conductors interconnecting ones of the transistors;
• a porous silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors wherein the silicon oxycarbide insulator has a surface area of approximately between 200 square meters per gram of the silicon oxycarbide and 450 square meters per gram of the silicon oxycarbide;
• a second conductor;
• and
• wherein the silicon oxycarbide insulator also insulates portions of the first conductor from portions of the second conductor.