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AssigneeEKC Technology, Inc.
InventorsRobert J. Small, Laurence McGhee, David J. Maloney, Maria L. Peterson
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A composition for chemical mechanical polishing that includes a slurry is described. A sufficient amount of a selectively oxidizing and reducing compound is provided to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of a metal and a dielectric material. A composition may include an effective amount of an hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, and a peracetic acid or periodic acid. A method for chemical mechanical polishing is described which includes applying a slurry that includes the composition to a surface to produce mechanical removal of the metal and dielectric material.
A composition for chemical mechanical polishing, which comprises a slurry, a sufficient amount of a selectively oxidizing and reducing compound comprising hydroxylamine or hydroxylamine salt or a mixture thereof to produce a differential removal of a metal and a dielectric material, and a pH adjusting compound to adjust the pH of the composition to provide a pH that makes the hydroxylamine or hydroxylamine salt or a mixture thereof provide the differential removal of the metal and the dielectric material.
A chemical mechanical polishing composition comprising an effective amount for chemical mechanical polishing of a hydroxylamine compound.
A chemical mechanical polishing composition comprising an effective amount for chemical mechanical polishing of ammonium persulfate and an effective amount of an accelerator comprising peroxymonosulfuric acid, potassium peroxymonosulfate, malonamide, or potassium iodate.
A composition for chemical mechanical polishing, which consists essentially of a slurry, a sufficient amount of periodic acid to produce a differential removal of a metal and a dielectric material, and a pH adjusting compound to adjust the pH of the composition.
A composition for chemical mechanical polishing, which comprises a sufficient amount of a selectively oxidizing and reducing compound comprising hydroxylamine or hydroxylamine salt or a mixture thereof to produce a differential removal of a metal and a dielectric material, and a pH adjusting compound to adjust the pH of the composition to provide a pH that makes the hydroxylamine or hydroxylamine salt or a mixture thereof provide the differential removal of the metal and the dielectric material.
A composition for chemical mechanical polishing comprising an effective amount for chemical mechanical polishing of ammonium persulfate and an oxidizing compound, wherein the oxidizing compound comprises peroxymonosulfuric acid, potassium peroxymonosulfate, a peroxymonosulfate, or malonamide.
Dependencies are inferred from the claim text.