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US 6,312,793 B1Granted
Multiphase low dielectric constant material
AssigneeInternational Business Machines Corporation
InventorsAlfred Grill, Vishnubhai Vitthalbhai Patel, Stephen McConnell Gates
Life of this patent
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Abstract
A low dielectric constant, multiphase material which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a multiphase low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of the multiphase low dielectric constant materials that are prepared by the method are further disclosed.
Claims14
A dielectric material having two or more phases comprising:
- a first phase consisting essentially of Si, C, O and H, and
- at least one second phase dispersed in said first phase, said at least one second phase consisting essentially of C, H and a multiplicity of nanometer-sized pores, said dielectric material having a dielectric constant of not more than 3.2.
Dependencies are inferred from the claim text.