Semi conductor optical amplifier
AssigneeAlcatel
InventorsLeon Goldstein, Jean-Yves Emery, Fabienne Gaborit
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Abstract
The invention relates to a semi-conductor optical amplifier insensitive to the polarization of light. The active layer (20) of this amplifier is made up of an alternating series of solid sub-layers alternately under tensile stress (21) and compressive stress (22) and having the same forbidden band-width. The sub-layers under tensile stress (21) favour the propagation of the TM mode of polarization of light and the sub-layers under compression (22) favour the propagation of the TE mode of polarization of light. In addition, the thicknesses of the sub-layers have values which ensure equal gains G(TE) and G(TM) for the active layer.
Claims6
A semi-conductor optical amplifier comprising an active layer deposited on a substrate of III-V material, said active layer comprising a plurality of bulk sub-layers without quantum wells which are alternately subject to tensile stress and compressive stress and have the same forbidden energy bandwidth,
- wherein the sub-layers under tensile stress permit the propagation of the TM mode of polarization of light, the sub-layers under compressive stress permit the propagation of the TE mode of polarization of light, and thicknesses of the sub-layers are values which ensure equal gains G(TE) and G(TM) for the active layer.
Dependencies are inferred from the claim text.