Manufacturing method of liquid crystal display preventing RF discharge damage
AssigneeLG. Philips LCD Co., Ltd.
InventorKyo Ho Moon
Life of this patent
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Abstract
A method for manufacturing a liquid crystal display device, includes the steps of forming a gate line, a gate pad at an end of the gate line, and a gate shorting bar connected to the gate pad on a substrate, wherein the gate shorting bar is offset from an edge of the substrate, and depositing a gate insulation layer completely covering the gate line, the gate pad, and the gate shorting bar.
Claims18
A method for manufacturing a liquid crystal display device, comprising the step of:
- forming a gate electrode and a gate line on a substrate;
- forming a gate pad at an end of the gate line;
- forming a gate shorting bar connected to the gate pad;
- and
- depositing a gate insulation layer on the gate electrode, the gate line, the gate pad, and the gate shorting bar,
- wherein the gate shorting bar is formed a distance away from an edge of the substrate so that the gate insulation layer completely covers all portions of the gate line, the gate pad, and the gate shorting bar, which are above the substrate.
A method for manufacturing a liquid crystal display device, comprising the steps of:
- forming a gate electrode, a gate line, a gate pad at an end of the gate line, a gate shorting bar connected to the gate pad, a data pad, and a data shorting bar connected to the data pad on a substrate;
- and
- depositing a gate insulation layer,
- wherein the gate shorting bar and the data shorting bar are formed a distance away from an edge of the substrate, and the gate insulation layer completely covers all portions of the gate line, the gate pad, the gate shorting bar, the data pad, and the data shorting bar, which are above the substrate.
A method of forming a liquid crystal display device, comprising the steps of:
- forming a gate electrode, a gate line connected to the gate electrode, a gate pad connected to the gate line, and a gate shorting bar connected to the gate pad on a substrate, wherein the gate shorting bar is formed a distance away from an edge of the substrate;
- forming a gate insulation layer completely covering all portions of the gate electrode, the gate line, the gate pad, the gate shorting bar, and an area of the substrate between the gate shorting bar and the edge of the substrate, which are above the substrate;
- forming a semiconductor layer over the gate insulation layer and over the gate electrode;
- forming a source electrode and a drain electrode over the semiconductor layer, wherein the drain electrode faces the source electrode;
- and
- forming a protection layer over the gate insulation layer, the source electrode and the drain electrode.
Dependencies are inferred from the claim text.